ELMPD01B Large area silicon photo diode and module
ELMPD01B is a photo sensor detecting 450nm to 1050nm wave length. It is a module containing large area silicon photo diodes assembled on a PCB. This products are designed based on customer requirement with any PCB size, selected single or multiple photo diodes and any necessary chip size. Wave length sensitivity is enhanced by 1/4 anti reflection layer on a silicon chip. Center wave length is also selected.
| COB type | |
|---|---|
| Chip size | 20mmx6.5mm chips common cathode |
| Datasheet | ELMPD01B |
- Application
- Laser beam optical axis adjustment
- Position detection
- Optical switch
Absolute Maximum Ratings
| Parameter | Symbol | Limit | Unit |
|---|---|---|---|
| Maximum reverse voltage | Vr | 15 | V |
| Maximum forward current | If | 100 | mA |
| Operating temperature range | Top | -20 to +80 | °C |
| Storage temperature range | Tstg | -20 to +80 | °C |
Spectral sensitivity characteristics
